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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN Muti-Chip General Purpose Amplifier VOLTAGE 45 Volts APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. CH847SPT CURRENT 0.2 Ampere FEATURE * Small surface mounting type. (SC-88/SOT-363) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Two internal isolated NPN transistors in one package. (1) (6) SC-88/SOT-363 1.2~1.4 0.65 0.65 2.0~2.2 CONSTRUCTION * Two NPN transistors in one package. (4) 0.15~0.35 (3) 1.15~1.35 MARKING * NF 0.08~0.15 0.1 Min. C1 B2 5 E2 4 0.8~1.1 0~0.1 2.15~2.45 CIRCUIT 6 TR2 TR1 1 E1 2 B1 3 C2 Dimensions in millimeters SC-88/SOT-363 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VCES VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 2002-12 PARAMETER collector-base voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open emitter open collector - - - - - - - Tamb 25 C; note 1 - MIN. MAX. 50 45 50 6 200 400 2 300 +150 150 +150 V V V V UNIT mA mA mA mW C C C -55 - -55 RATING CHARACTERISTIC ( CH847SPT ) THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL ICBO IEBO hFE VCEsat VBEsat Cc fT Note 1. Pulse test: tp 300 s; 0.02. PARAMETER collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage collector capacitance transition frequency CONDITIONS IE = 0; VCB = 30 V IC = 0; VCB = 30 V; TA = 150 OC IC = 0; VEB = 4 V IC = 2.0 mA; VCE = 5.0V; note 1 IC = 10 mA ; I B = 0.5 mA IC = 10 mA ; I B = 0.5 mA IC = 2.0 mA;VCE = 5.0 V IC = 10 mA;VCE = 5.0 V IE = ie = 0; VCB = 10V ; f = 1 MHz IC = 50 mA; VCE = 5 V ; f = 100 MHz - - - 110 - - 0.58 - - 200 MIN. MAX. 15 30 15 630 250 650 0.70 0.77 2.0 - mV mV V V pF MHz UNIT nA uA nA PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 415 UNIT K/W RATING CHARACTERISTIC CURVES ( CH847SPT ) Typical Puls ed Current Gain vs Collector Curr ent 1200 1000 800 600 25 C 125 C VCESAT - COLLE CTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Collector-Emitter Saturation Voltage vs Collector Current 0.3 0. 25 0.2 125 C V CE = 5.0 V B= 10 0. 15 0.1 0.0 5 0.1 25 C - 40 C 400 - 40 C 200 0 0.01 0.03 0. 1 0.03 1 3 10 30 I C - COLLECTOR CURRENT (mA) 100 1 10 I C - COLLECTOR CURRENT (mA) 100 RATING CHARACTERISTIC CURVES ( CH847SPT ) VBESAT - COLLECTOR-EMITTER VOLTAGE (V) 1 - 40 C VBEON- BASE-EMITTER ON VOLTAGE (V) Base-Emitter Saturation Voltage vs C ollect or Current Base-Emitter ON Voltage vs Collector Curre nt 1 0.8 0.6 125 C - 40 C 25 C 0.8 0.6 0.4 B= 10 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 25 C 125 C 0.4 V CE = 5.0 V 0.2 0.1 1 10 I C - COLL ECTOR CURRENT (mA) 40 Collect or-Cutoff Current vs Ambient Tem perature I CBO - COLLECTOR CURRENT (nA) 10 VCB = 45V CAPACITANCE (pF) 4 3 5 Inp ut and Output Capacitanc e vs Reverse Bias Voltage f = 1.0 MHz 1 C te 2 1 0 C ob 0.1 25 50 75 100 125 TA - AMBIENT TEMPERATURE ( C ) 150 0 4 8 12 16 REVERSE BIAS VOLTAGE (V) 20 V CE - COLLECTOR VOLTAGE (V) 10 7 5 150 MHz 175 MHz CHARACTERISTICS vs vALUE AT TA=25 C O Cont ours of Constant Gain Bandwidth Product (f T ) Norm alized Coll ect or-Cut off Current vs Ambient Temperature 1000 100 3 2 125 MHz 100 MHz 75 MHz 10 1 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 1 25 50 75 100 125 T A - A MB IE NT TEMP ERATURE ( C) 150 RATING CHARACTERISTIC CURVES ( CH847SPT ) Noise Figure vs F requency 10 NF - NOISE FIGURE (dB) I C = 200 uA, R S = 10 k I C = 100 uA, R S = 10 k I C = 1.0 m A, R S = 500 4 I C = 1.0 mA, R S = 5.0 k V CE = 5.0V 0 0.0001 0.001 0.01 0.1 1 f - FREQUENCY (MHz) 10 100 NF - NOISE FIGURE (dB) 5 V CE = 5.0 V Wideband N oise Frequenc y vs S ource Resi st anc e 8 4 3 2 1 BA NDWIDTH = 15.7 kHz 6 I C = 100 uA I C = 30 uA 2 I C = 10 uA 0 1,000 2,000 5,000 10,000 20,000 50,000 100,000 RS - SOURCE RESISTANCE ( Ohms ) Power Dissipation vs Ambient Temperature P D - POWER DISSIPATION (mW) 500 400 300 200 100 0 0 25 50 75 100 TEMPERATURE ( C) 125 150 |
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